Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.
نویسندگان
چکیده
Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO(x)) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO(x) RRAM devices could be one of the candidates for the development of low cost RRAM.
منابع مشابه
Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
Articles you may be interested in Multi-layered nanocomposite dielectrics for high density organic memory devices Appl. TiO 2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J. Nonvolatile memory cell effect in multilayered Ni 1 − x Fe x self-assembled nanoparticle arrays in polyimide
متن کاملElectric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices
Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in “engineering” crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible enginee...
متن کاملAnalog and Digital Switching Characteristics of Transition Metal Oxide Based Resistive Random Access Memory (ReRAM) Devices
Transition Metal Oxide (TMO) Based Resistive Random Access Memory (ReRAM) devices have gathered significant research attention for non-volatile data storage applications. The major advantages lie in terms of scalability, low switching voltages, and process compatibility with the CMOS technologies [1, 2]. However, to take the complete benefit of this enabling technology there are several challen...
متن کاملAdvanced Physical Modeling of SiOx Resistive Random Access Memories
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects a...
متن کاملImproved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment
The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2 thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity cha...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Chemical communications
دوره 51 44 شماره
صفحات -
تاریخ انتشار 2015